s1a ... s1y s1a ... s1y surface mount silicon rectifier diodes silizium-gleichrichterdioden fr die oberfl?chenmontage version 2011-05-31 dimensions - ma?e [mm] nominal current C nennstrom 1 a plastic case kunststoffgeh?use ~ sma ~ do-214ac weight approx. C gewicht ca. 0.07 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped and reeled standard lieferform gegurtet auf rolle maximum ratings and characteristics 1 ) grenz- und kennwerte 1 ) type typ (repetitive) peak reverse voltage (periodische-)spitzensperrspannung forward voltage durchlass-spannung leakage current C sperrstrom t j = 100c v rrm [v] / v rsm [v] v f [v] @ i f = 1a i r [a] @ v rrm i r [a] @ v rrm s1a 50 < 1.1 < 5 < 50 s1b 100 < 1.1 < 5 < 50 s1d 200 < 1.1 < 5 < 50 s1g 400 < 1.1 < 5 < 50 s1j 600 < 1.1 < 5 < 50 s1k 800 < 1.1 < 5 < 50 s1m 1000 < 1.1 < 5 < 50 s1t 1300 < 1.1 < 5 < 50 s1w 1600 < 1.1 < 5 < 50 S1X 1800 < 1.1 < 5 < 50 s1y 2000 < 1.1 < 5 < 50 max. average forward rectified current, r-load dauergrenzstrom in einwegschaltung mit r-last t t = 100c i fav 1 a repetitive peak forward current C periodischer spitzenstrom f > 15 hz i frm 6 a 2 ) peak forward surge current, 50/60 hz half sine-wave sto?strom fr eine 50/60 hz sinus-halbwelle t a = 25c i fsm 30/32 a rating for fusing, t < 10 ms C grenzlastintegral, t < 10 ms t a = 25c i 2 t 4.5 a 2 s typical junction capacitance C typische sperrschichtkapzit?t v r = 4 v c j typ. 12 pf junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -50...+150c -50...+150c thermal resistance junction-ambient ? w?rme widerstand sperrschicht-umgebung thermal resistance junction- terminal ? w?rmewiderstand sperrschicht-anschluss r tha r tht < 70 k/w 2 ) < 30 k/w 1 t j = 25c unless otherwise specified C t j = 25c wenn nicht anders angegeben 2 mounted on p.c. board with 25 mm 2 copper pads at each terminal montage auf leiterplatte mit 25 mm 2 kupferbelag (l?tpad) an jedem anschluss ? diotec semiconductor ag http://www.diotec.com/ 1 type typ 0.15 1 0.3 4.5 0.3 1 . 5 2 . 1 0 . 1 2 . 2 0 . 2 5 0.2 2 . 7 0 . 2
s1a ... s1y 2 http://www.diotec.com/ ? diotec semiconductor ag 10 10 1 10 10 2 -1 -2 [a] i f forward characteristics (typical values) durchlasskennlinien (typische werte) 0.4 v f 0.8 1.0 1.2 1.4 [v] 1.8 t = 25c j t = 125c j 30a-(1a-1.1v) peak forward surge current versus number of cycles at 50 hz durchla?-spitzenstrom in abh. von der zahl der halbwellen bei 50 hz 10 10 1 2 [a] ? f 1 10 10 [n] 10 2 3 relative transient thermal impedance vs. pulse duration (typical) relativer transienter w?rmewiderstand ber impulsdauer (typisch) 100 10 1 0.01 0.1 1 10 10 10 2 3 [s] [t ] p [%] z r tha tha 25 20 15 10 5 0 [pf] c j v r [v] junction capacitance vs. reverse voltage (typical) sperrschichtkapazit?t in abh. v.d. sperrspg. (typ.) rated forward current vs. temp. of the terminals in abh. v. d. temp. der terminals zul. richtstrom 120 100 80 60 40 20 0 i fav [%] [c] t t 150 100 50 0 10 10 1 10 2 1 -2 10 -1 [a] i r 0 v rrm 40 60 80 100 [%] typ. instantaneous leakage current vs. rev. voltage typ. sperrstrom (augenblickswert) . sperrspannung t = 25c j t = 100c j t = 125c j
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